观测反PT对称电路中的杨氏双缝现象

IF 3.1 3区 物理与天体物理 Q2 PHYSICS, APPLIED Journal of Physics D: Applied Physics Pub Date : 2024-09-05 DOI:10.1088/1361-6463/ad73e2
Keyu Pan, Xiumei Wang, Xizhou Shen, Haoyi Zhou, Xingping Zhou
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引用次数: 0

摘要

在过去几十年中,量子和经典领域都对干涉进行了广泛研究,它揭示了光的波动性,并被广泛用于高精度测量。我们提出了一种现象,即具有反PT(APT)对称性的 Su-Schrieffer-Heeger 电路模型的时变电压所呈现的离散衍射和干涉现象。为了证明 APT 电路中的杨氏双缝现象,我们初步探索了断相电压的耦合模式理论,观察了单激励下的离散衍射和双激励下的干涉。此外,我们还设计了一个移相电路,以观察相位差和距离对离散干涉的影响。我们的工作将光学效应与凝聚态物理相结合,从理论和实验上展示了电路中的杨氏双缝现象。
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Observation of Young’s double-slit phenomenon in anti-PT-symmetric electrical circuits
In the last few decades, interference has been extensively studied in both the quantum and classical fields, which reveals light volatility and is widely used for high-precision measurements. We have put forward the phenomenon in which the discrete diffraction and interference phenomena, presented by the time-varying voltage of a Su–Schrieffer–Heeger circuit model with an anti-PT (APT) symmetry. To demonstrate Young’s double-slit phenomenon in an APT circuit, we initially explore the coupled mode theory of voltage in the broken phase, observe discrete diffraction under single excitation and interference under double excitations. Furthermore, we design a phase-shifting circuit to observe the effects of phase difference and distance on discrete interference. Our work combines the effects in optics with condensed matter physics, show the Young’s double-slit phenomenon in electrical circuits theoretically and experimentally.
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来源期刊
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics 物理-物理:应用
CiteScore
6.80
自引率
8.80%
发文量
835
审稿时长
2.1 months
期刊介绍: This journal is concerned with all aspects of applied physics research, from biophysics, magnetism, plasmas and semiconductors to the structure and properties of matter.
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