通过与弛豫铁电体耦合调谐单层 WSe2 中的带电局部激子

Qiaohui Zhou, Fei Wang, Ali Soleymani, Kenji Watanabe, Takashi Taniguchi, Jiang Wei, Xin Lu
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引用次数: 0

摘要

在二维(2D)层状材料中发现单光子发射器(SPEs)极大地激发了人们利用该系统进行量子科学与技术研究的热情。因此,对单光子发射器(包括中性和带电发射器)进行动态控制是非常有必要的。虽然自由和中性局域激子的应变工程已经得到了证实,但带电局域激子的应变工程却很少,因为带电局域激子需要额外的栅极控制。在这篇文章中,我们通过将顶部门控单层半导体转移到泻电或铁电上,展示了应变可调的带电局域激子。重要的是,我们揭示了局部振荡偶极子与纳米域之间增强的相互作用。我们进一步证明了应变依赖性圆极化和磁场下可调的能量转移率。我们的研究结果表明,二维材料与弛豫铁电的集成为纳米光子学和量子光子学提供了一个丰富的平台。
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Tuning Charged Localized Excitons in Monolayer WSe2 via Coupling to a Relaxor Ferroelectric
The discovery of single photon emitters (SPEs) in two-dimensional (2D) layered materials has greatly inspired numerous studies towards utilizing the system for quantum science and technology. Thus, the dynamic control of SPEs, including neutral and charged emitters, is highly desirable. In addition to the electric control, strain tuning is particularly attractive for the 2D materials since it can activate SPEs which are formed upon localizing free excitons. While strain engineering has been demonstrated for free and neutral localized excitons, few were shown on charged localized excitons which require an additional gate control. In this article, we show the strain-tunable charged localized excitons by transferring a top-gated monolayer semiconductor on a relaxor ferroelectric. Importantly, we unveil an enhanced interaction between the localized oscillating dipoles and the nanodomains. We further demonstrate the strain-dependent circular polarization and tunable rates of energy shifts under a magnetic field. Our results imply that the integration of 2D materials with relaxor ferroelectrics provides a rich platform for nanophotonics and quantum photonics.
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