多层石墨烯堆栈中位错的影响:相场晶体研究

K. R. Elder, Zhi-Feng Huang, T. Ala-Nissila
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摘要

这项研究考察了多层石墨烯堆栈(最多六层)中 5 | 7$ 位错的影响。研究是通过最近开发的多层系统相场晶体(PFC)模型进行的,该模型包含平面外变形,其参数化与石墨烯双层及其他系统的密度函数理论计算相匹配。所考虑的具体构型包括夹在完美石墨烯层之间的一个含有四个 5|7$ 位错(即两个位错偶极子)的单层。研究揭示了缺陷层中差排产生的应变场如何导致平面外变形,进而引起邻近层的变形。与无缺陷系统相比,研究对多层堆栈的无缺陷能进行了定量预测,结果表明无缺陷能会随着层数和系统尺寸的增加而增加。此外,根据预测,系统缺陷能在叠层中达到十层时就会饱和,这表明了缺陷对整个多层的影响范围。还定量确定了堆栈不同层的应力场分布和层高轮廓的变化。
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Influence of dislocations in multilayer graphene stacks: A phase field crystal study
In this work the influence of $5|7$ dislocations in multiplayer graphene stacks (up to six layers) is examined. The study is conducted through a recently developed Phase Field Crystal (PFC) model for multilayer systems incorporating out-of-plane deformations and parameterized to match to density functional theory calculations for graphene bilayers and other systems. The specific configuration considered consists of one monolayer containing four $5|7$ dislocations (i.e., two dislocation dipoles) sandwiched in between perfect graphene layers. The study reveals how the strain field from the dislocations in the defected layer leads to out-of-plane deformations that in turn cause deformations of neighboring layers. Quantitative predictions are made for the defect free energy of the multilayer stacks as compared to a defect-free system, which is shown to increase with the number of layers and system size. Furthermore it is predicted that system defect energy saturates by roughly ten sheets in the stack, indicating the range of defect influence across the multilayer. Variations of stress field distribution and layer height profiles in different layer of the stack are also quantitatively identified.
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