阳离子掺杂氧化钛(Ti2.85-xMxO4N,M = Zn、Co、Cu)的合成与光催化活性

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-09-27 DOI:10.1039/D4DT02378A
Qijing Gao, Wenyan Shi and Wenqian Chen
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引用次数: 0

摘要

在光催化半导体中利用可见光受到宽能带隙和快速电子-空穴对重组的限制。本研究旨在通过在不同温度下合成氮掺杂和阳离子掺杂的 Cs0.68Ti1.83O4,并分析其光催化性能和机理来解决这一限制。光学实验结果表明,N/M(其中 M 代表 Zn、Co 或 Cu)的共掺杂可以通过调节能带位置,有效抑制光生载流子的重组,从而大大降低 Cs0.68Ti1.83O4 的能带隙。值得注意的是,在 600 °C 的温度下,N/Cu 共掺杂的 Cs0.68Ti1.83O4 的能带隙最小,仅为 1.98 eV,从而表现出卓越的光催化性能。污染物光催化降解测试表明,在光照下 120 分钟,亚甲基蓝溶液的降解效率为 84%,这是 -OH 和 -O2- 相互作用的结果。这项研究为研究共掺杂改性光催化材料提供了新的可能性。
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Synthesis and photocatalytic activity of cation-doped titanium oxynitrides (Ti2.85−xMxO4N, M = Zn, Co, Cu)†

The utilization of visible light in photocatalytic semiconductors is restricted by the presence of a wide energy bandgap and fast electron–hole pair recombination. This study aims to address this limitation by synthesizing nitrogen- and cation-doped Cs0.68Ti1.83O4 at varying temperatures and subsequently analyzing the photocatalytic performance and mechanism. The optical experimental findings indicate that the co-doping of N/M (where M represents Zn, Co, or Cu) can considerably decrease the energy bandgap of Cs0.68Ti1.83O4 by regulating the energy band position and effectively suppressing the recombination of photogenerated carriers. Notably, at a temperature of 600 °C, the N/Cu co-doped Cs0.68Ti1.83O4 exhibits the smallest energy bandgap of 1.98 eV, thereby demonstrating superior photocatalytic performance. The photocatalytic degradation test of pollutants shows that the degradation efficiency of methylene blue solution in 120 minutes under light was 84%, which is the result of the interaction between ˙OH and ˙O2. This study provides new possibilities for the study of co-doped modified photocatalytic materials.

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4.30%
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