晶粒生长的分子动力学模拟与实验数据的比较

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Scripta Materialia Pub Date : 2024-10-30 DOI:10.1016/j.scriptamat.2024.116429
Meizhong Lyu , Zipeng Xu , Gregory S. Rohrer , Elizabeth A. Holm
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引用次数: 0

摘要

本研究采用实验数据作为多晶镍晶粒生长分子动力学模拟的初始微观结构,旨在研究无杂质体系中晶界曲率与速度之间的关系。开发并验证了在体素化结构和原子结构之间转换数据的双向方法。MD 晶粒生长模拟的结果与实验中观察到的晶粒生长特征基本吻合。最重要的是,模拟结果提供了更多证据,支持了多晶体晶粒生长过程中速度与曲率之间缺乏相关性的报道,并证实这与溶质、沉淀物、加工路线或表征方法无关。这意味着三维晶界网络的特征干扰了速度/曲率关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Comparing molecular dynamics simulations of grain growth with experimental data
This study employed experimental data as the initial microstructure for molecular dynamics simulation of grain growth in polycrystalline nickel, aiming to investigate the relationship between grain boundary curvature and velocity in impurity-free systems. A bidirectional method for converting data between voxelized and atomic structures was developed and validated. The outcomes of the MD grain growth simulation broadly matched the characteristics of grain growth observed in the experiment. Most significantly, the simulation result contributes additional evidence supporting the reported absence of a correlation between velocity and curvature during grain growth in polycrystals, and confirms that this is not related to solutes, precipitates, processing route, or characterization method. The implication is that features of the 3D grain boundary network interfere with the velocity/curvature relationship.
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来源期刊
Scripta Materialia
Scripta Materialia 工程技术-材料科学:综合
CiteScore
11.40
自引率
5.00%
发文量
581
审稿时长
34 days
期刊介绍: Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.
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