研究固溶体合金 (CdSe)1-x(As2S3)x 的电物理特性和光电特性取决于其成分

IF 1.6 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER The European Physical Journal B Pub Date : 2024-11-02 DOI:10.1140/epjb/s10051-024-00813-1
I. I. Aliyev, R. M. Rzayev, Kh. M. Gashimov, C. A. Ahmedova, Y. I. Aliyev, A. Y. Huseynova
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引用次数: 0

摘要

研究可再生能源是当前亟待解决的问题。这类材料是通过构建相图或对现有材料进行阳离子-阴离子置换而产生的。从这个角度来看,(CdSe)1-x(As2S3)x 固溶体的形成可能是由于阴离子置换,而阴离子置换能够产生功能特性。为此,我们对固溶体 (CdSe)1-x(As2S3)x 进行了差热分析 (DTA)、X 射线衍射 (XRD)、微结构分析 (MSA) 以及微硬度和密度测定。研究了碲化镉与 As2S3 化学作用的性质,确定了在碲化镉成分中引入 As2S3 会导致固溶体的形成。此外,研究还发现,在 As2S3 浓度达到 3 摩尔% 时,固溶体就会形成。研究了 (CdSe)1-x(As2S3)x(x = 0.01;0.02;0.03)固溶体的电导率和热电磁场的温度依赖性。结果表明,所获得的 (CdSe)1-x(As2S3)x (x = (x = 0.01; 0.02; 0.03) 固溶体合金是中等电阻的半导体。当在 CdSe 成分中引入 1、2 和 3 摩尔% As2S3 的高电阻样品时,合金的比电阻会根据成分的不同而增加,导电率也会相应降低。对于 As2S3 含量为 0.3、0.6、0.8 和 1.0 摩尔% 的固溶体 (CdSe)1-x(As2S3)x,研究了光电流的光谱分布。含 0.3、0.6、0.8 和 1.0 摩尔% As2S3 的样品是能够在 0.4-1.1 μm 波长范围内工作的光敏材料。
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Investigation of electrophysical and photoelectric properties of solid solution alloys (CdSe)1–x(As2S3)x depending on composition

The study of renewable energy sources is currently an urgent problem. Such materials are produced by constructing phase diagrams or by cation–anionic substitution of an existing material. From this point of view, the formation of a solid solution (CdSe)1–x(As2S3)x can be due to anionic substitution, which is capable of creating functional properties. In this regard, differential thermal analysis (DTA), X-ray diffraction (XRD), microstructural analysis (MSA), as well as measurements of microhardness and density were performed on solid solutions (CdSe)1–x(As2S3)x. The nature of the chemical interaction of CdSe with As2S3 was studied and it was established that the introduction of As2S3 into the composition of CdSe leads to the formation of solid solutions. Moreover, it has been found that solid solutions are formed up to 3 mol% concentration of As2S3. The temperature dependence of the electrical conductivity and thermo-EMF of (CdSe)1–x(As2S3)x (x = 0.01; 0.02; 0.03) solid solutions has been studied. It has been established that the obtained alloys of the solid solution (CdSe)1–x(As2S3)x (x = (x = 0.01; 0.02; 0.03) are semiconductors of medium resistance. When introducing high-resistance samples of 1; 2 and 3 mol. % As2S3 into the composition of CdSe, the specific resistance of the alloys increases depending on the composition, and the conductivity decreases accordingly. For alloys of solid solutions (CdSe)1–x(As2S3)x, in the composition of 0.3; 0.6; 0.8 and 1.0 mol % As2S3, the spectral distribution of the photocurrent was studied. Samples containing 0.3; 0.6; 0.8 and 1.0 mol% As2S3 are photosensitive materials capable of operating in the wavelength range of 0.4–1.1 μm.

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来源期刊
The European Physical Journal B
The European Physical Journal B 物理-物理:凝聚态物理
CiteScore
2.80
自引率
6.20%
发文量
184
审稿时长
5.1 months
期刊介绍: Solid State and Materials; Mesoscopic and Nanoscale Systems; Computational Methods; Statistical and Nonlinear Physics
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