一种使用双分支电阻器和微带线负载槽线结构的宽带衰减器,具有更好的衰减斜率

0 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE microwave and wireless technology letters Pub Date : 2024-10-02 DOI:10.1109/LMWT.2024.3466935
Bin-Yun Han;Jin Xu;Jia-Hao Su;Ming Zhao;Fang Liu;Hao Wan
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引用次数: 0

摘要

这封信提出了一种新的宽带衰减器设计方法,它采用了双分支电阻器和微带线加载槽线结构。在槽线上加载电阻器以实现衰减特性,并提出了双分支结构和在每个分支中植入微带线的方法,以在衰减量变大时改善宽带内的衰减斜率。为了验证所提出的设计方法,设计并测量了一个 11 级衰减器,其在 2-5 GHz 带宽内的最小插入损耗为 1.92 dB,动态衰减范围为 20 dB,回波损耗优于 8.5 dB。此外,还研究了所用电阻器中寄生电感的影响,以澄清测量衰减器的衰减波动。
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A Broadband Attenuator Using Dual-Branch Resistors and Microstrip-Line-Loaded Slotline Structure With Improved Attenuation Slope
This letter presents a new method for broadband attenuator design, which uses dual-branch resistors and microstrip-line-loaded slotline structure. Resistors are loaded on slotline to achieve attenuation property, and dual-branch configuration and implantable microstrip line in each branch are proposed to improve attenuation slope within broadband when the attenuation amount becomes large. To validate the proposed design method, an 11-stage attenuator is designed and measured, which has a minimum insertion loss of 1.92 dB, a dynamic attenuation range of 20 dB, and a return loss of better than 8.5 dB, within the bandwidth of 2–5 GHz. Moreover, the effect of parasitic inductance in used resistors is also investigated to clarify the attenuation fluctuation of the measured attenuator.
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Table of Contents IEEE Microwave and Wireless Technology Letters Information for Authors IEEE Microwave and Wireless Technology Letters publication Table of Contents IEEE Open Access Publishing
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