利用烧结银的速率和温度相关模型,为基于碳化硅的汽车电源模块建立基于失效物理学的寿命模型

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Reliability Pub Date : 2024-11-21 DOI:10.1016/j.microrel.2024.115550
Freerik Forndran , Jens Heilmann , Markus Leicht , Bernhard Wunderle
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引用次数: 0

摘要

新一代汽车电源模块对芯片相关封装技术以及可靠性和使用寿命评估提出了新的挑战和要求。事实证明,使用烧结银进行与芯片相关的封装大有可为,并能实现新的设计,例如烧结芯片附件与烧结顶面互连(包括铜箔和铜带键)的结合。然而,多年来为功率模块开发的经验寿命模型已不再适用。全面的失效物理方法可以提供补救措施,因为它可以通过有限元模拟大大缩短测试时间。这种方法要求详细了解相关的失效机制,以及相关材料的电气、热和机械特性,并随后进行现场耦合建模。对整个功率模块的故障分析表明,连接铜箔和半导体芯片的顶面烧结层很容易发生降解。因此,这项工作的核心是多孔烧结银的机械特性,特别是一次和二次蠕变行为。新开发的蠕变模型首次将一次蠕变的负载反转考虑在内,并通过子程序实现。这样就可以在失效物理学框架内进行寿命模拟,从而为采用烧结银的复杂汽车电源模块建立了第一个模块级寿命模型。
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Physics-of-failure based lifetime modelling for SiC based automotive power modules using rate- and temperature-dependent modelling of sintered silver
The new generations of automotive power modules pose new challenges and requirements for the die-related packaging technologies as well as the assessment of reliability and lifetime. The use of sintered silver for the die-related packaging in particular has proven promising and enables new designs such as a sintered die attach combined with a sintered top side interconnection comprising a copper foil and copper ribbon bonds. However, the empirical lifetime models for power modules developed over many years are not suitable any more. A holistic Physics-of-Failure approach can provide remedy as it allows for a significant reduction of testing time via finite element simulations. This approach requires a detailed understanding of the relevant failure mechanisms as well as an electrical, thermal and mechanical characterisation of the involved materials and subsequent field coupled modelling. A failure analysis of the complete power module revealed that the top side sinter layer connecting the copper foil to the semiconductor die is prone to degradation. Therefore, the core of this work is the mechanical characterisation of porous sintered silver and, in particular, the primary and secondary creep behaviour. A newly developed creep model which – for the first time – takes load reversal for primary creep into account is implemented with a subroutine. This allows for lifetime simulations within a Physics-of-Failure framework resulting in a first lifetime model on module level for a complex automotive power module employing sintered silver.
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
期刊最新文献
Editorial Board Comparative study of single event upset susceptibility in the Complementary FET (CFET) and FinFET based 6T-SRAM Effects of humidity, ionic contaminations and temperature on the degradation of silicone-based sealing materials used in microelectronics Physics-of-failure based lifetime modelling for SiC based automotive power modules using rate- and temperature-dependent modelling of sintered silver Study on single-event burnout hardening with reduction of hole current density by top polysilicon diode of SOI LDMOS based on TCAD simulations
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