{"title":"MXene 驱动的空穴选择性自组装单层界面增强技术,用于高效稳定的 pi-n 型过氧化物太阳能电池","authors":"Kyeong Su Kim, Jung Jae Do, Jae Woong Jung","doi":"10.1039/d4ta07117d","DOIUrl":null,"url":null,"abstract":"The hole-selective interface in planar p-i-n architecture devices serves a multifaceted role, functioning as a robust substrate for the growth of perovskite absorber layers, facilitating efficient hole-carrier extraction, and suppressing electron transport-related recombination. However, as a buried interface, it remains non-exposed, characterized by ambiguous electronic states and a significant presence of defective antisites at the perovskite absorber and indium tin oxide anode junctions. Although self-assembled monolayers (SAMs) have been proposed as standalone hole-selective interfaces, their limited electrical properties fail to fully meet the demands of high-performance p-i-n perovskite solar cells (PSCs). In this study, we functionalize the SAM-based hole-selective interface with MXene (Ti3C2Tx) nanosheets, thereby enhancing electrical conductivity, anode work function, and surface properties to mitigate the challenges associated with the buried interface. The integration of MXene nanosheets promotes efficient carrier transport, reduces interfacial trap density at the perovskite interfaces, and improves film quality while suppressing non-radiative recombination. As a result, the inclusion of MXene in the SAM-based hole-selective interface significantly enhances the power conversion efficiency (PCE) from 20.86% to 23.25% in CsFAPbI3-based p-i-n perovskite solar cells. Moreover, the MXene nanosheets contribute to increased hydrophobicity of the SAM/ITO surface, enabling the device to retain over 91% of its initial PCE under ambient conditions for 800 hours. These findings underscore the potential of MXene as a novel component in the design of hole-selective buried interfaces, paving the way for substantial improvements in both photovoltaic performance and long-term stability of p-i-n PSCs.","PeriodicalId":82,"journal":{"name":"Journal of Materials Chemistry A","volume":"94 1","pages":""},"PeriodicalIF":10.7000,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MXene-Driven Augmentation of Hole-Selective Self-Assembled Monolayer Interfaces for Efficient and Stable p-i-n Perovskite Solar Cells\",\"authors\":\"Kyeong Su Kim, Jung Jae Do, Jae Woong Jung\",\"doi\":\"10.1039/d4ta07117d\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The hole-selective interface in planar p-i-n architecture devices serves a multifaceted role, functioning as a robust substrate for the growth of perovskite absorber layers, facilitating efficient hole-carrier extraction, and suppressing electron transport-related recombination. However, as a buried interface, it remains non-exposed, characterized by ambiguous electronic states and a significant presence of defective antisites at the perovskite absorber and indium tin oxide anode junctions. Although self-assembled monolayers (SAMs) have been proposed as standalone hole-selective interfaces, their limited electrical properties fail to fully meet the demands of high-performance p-i-n perovskite solar cells (PSCs). In this study, we functionalize the SAM-based hole-selective interface with MXene (Ti3C2Tx) nanosheets, thereby enhancing electrical conductivity, anode work function, and surface properties to mitigate the challenges associated with the buried interface. The integration of MXene nanosheets promotes efficient carrier transport, reduces interfacial trap density at the perovskite interfaces, and improves film quality while suppressing non-radiative recombination. As a result, the inclusion of MXene in the SAM-based hole-selective interface significantly enhances the power conversion efficiency (PCE) from 20.86% to 23.25% in CsFAPbI3-based p-i-n perovskite solar cells. Moreover, the MXene nanosheets contribute to increased hydrophobicity of the SAM/ITO surface, enabling the device to retain over 91% of its initial PCE under ambient conditions for 800 hours. These findings underscore the potential of MXene as a novel component in the design of hole-selective buried interfaces, paving the way for substantial improvements in both photovoltaic performance and long-term stability of p-i-n PSCs.\",\"PeriodicalId\":82,\"journal\":{\"name\":\"Journal of Materials Chemistry A\",\"volume\":\"94 1\",\"pages\":\"\"},\"PeriodicalIF\":10.7000,\"publicationDate\":\"2024-11-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Chemistry A\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1039/d4ta07117d\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry A","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1039/d4ta07117d","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
MXene-Driven Augmentation of Hole-Selective Self-Assembled Monolayer Interfaces for Efficient and Stable p-i-n Perovskite Solar Cells
The hole-selective interface in planar p-i-n architecture devices serves a multifaceted role, functioning as a robust substrate for the growth of perovskite absorber layers, facilitating efficient hole-carrier extraction, and suppressing electron transport-related recombination. However, as a buried interface, it remains non-exposed, characterized by ambiguous electronic states and a significant presence of defective antisites at the perovskite absorber and indium tin oxide anode junctions. Although self-assembled monolayers (SAMs) have been proposed as standalone hole-selective interfaces, their limited electrical properties fail to fully meet the demands of high-performance p-i-n perovskite solar cells (PSCs). In this study, we functionalize the SAM-based hole-selective interface with MXene (Ti3C2Tx) nanosheets, thereby enhancing electrical conductivity, anode work function, and surface properties to mitigate the challenges associated with the buried interface. The integration of MXene nanosheets promotes efficient carrier transport, reduces interfacial trap density at the perovskite interfaces, and improves film quality while suppressing non-radiative recombination. As a result, the inclusion of MXene in the SAM-based hole-selective interface significantly enhances the power conversion efficiency (PCE) from 20.86% to 23.25% in CsFAPbI3-based p-i-n perovskite solar cells. Moreover, the MXene nanosheets contribute to increased hydrophobicity of the SAM/ITO surface, enabling the device to retain over 91% of its initial PCE under ambient conditions for 800 hours. These findings underscore the potential of MXene as a novel component in the design of hole-selective buried interfaces, paving the way for substantial improvements in both photovoltaic performance and long-term stability of p-i-n PSCs.
期刊介绍:
The Journal of Materials Chemistry A, B & C covers a wide range of high-quality studies in the field of materials chemistry, with each section focusing on specific applications of the materials studied. Journal of Materials Chemistry A emphasizes applications in energy and sustainability, including topics such as artificial photosynthesis, batteries, and fuel cells. Journal of Materials Chemistry B focuses on applications in biology and medicine, while Journal of Materials Chemistry C covers applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry A include catalysis, green/sustainable materials, sensors, and water treatment, among others.