铁磁材料Ca2TiFeO6的上层结构排列及半金属半导体性质

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-08-01 Epub Date: 2025-04-02 DOI:10.1016/j.mssp.2025.109539
C.E. Deluque-Toro , L.V. Parra-Mesa , E.A. Ariza-Echeverri , D.A. Landínez-Téllez , J. Roa-Rojas
{"title":"铁磁材料Ca2TiFeO6的上层结构排列及半金属半导体性质","authors":"C.E. Deluque-Toro ,&nbsp;L.V. Parra-Mesa ,&nbsp;E.A. Ariza-Echeverri ,&nbsp;D.A. Landínez-Téllez ,&nbsp;J. Roa-Rojas","doi":"10.1016/j.mssp.2025.109539","DOIUrl":null,"url":null,"abstract":"<div><div>The modern technological applicability of materials depends substantially on their structural and physical properties. In the area of spintronics, materials design focuses on attributes such as multiferroicity, colossal magnetoresistance, ferromagnetism in semiconductors and half-metallicity, among others, which are conducive to the development of devices based on spin-polarized currents. For these purposes, the perovskite family has proven useful for spin technologies. In this manuscript, the synthesis of the material Ca<sub>2</sub>TiFeO<sub>6</sub> is reported. Crystallographic analysis reveals that it adopts a monoclinic structure (space group P2<sub>1</sub>/n), classifiable as a double perovskite type due to the ordered distribution of Ti and Fe cations along the crystallographic axes, forming a superstructure. Magnetic response measurements show the ferromagnetic feature and band structure, and density of electronic states calculations suggest the occurrence of half-metallicity. For one of the spin orientations, the material behaves like a metal due to strong hybridizations of the 4d-Fe orbitals with 2p-O, and for the other like a semiconductor with band gap of 2.3 eV, thanks to the availability of 3d-Fe and 3d-Ti states in the conduction band. The results demonstrate the multifunctionality of the material for use in spintronics technology.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109539"},"PeriodicalIF":4.6000,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Superstructural arrangement and half-metallic semiconductor nature of the ferromagnetic material Ca2TiFeO6\",\"authors\":\"C.E. Deluque-Toro ,&nbsp;L.V. Parra-Mesa ,&nbsp;E.A. Ariza-Echeverri ,&nbsp;D.A. Landínez-Téllez ,&nbsp;J. Roa-Rojas\",\"doi\":\"10.1016/j.mssp.2025.109539\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The modern technological applicability of materials depends substantially on their structural and physical properties. In the area of spintronics, materials design focuses on attributes such as multiferroicity, colossal magnetoresistance, ferromagnetism in semiconductors and half-metallicity, among others, which are conducive to the development of devices based on spin-polarized currents. For these purposes, the perovskite family has proven useful for spin technologies. In this manuscript, the synthesis of the material Ca<sub>2</sub>TiFeO<sub>6</sub> is reported. Crystallographic analysis reveals that it adopts a monoclinic structure (space group P2<sub>1</sub>/n), classifiable as a double perovskite type due to the ordered distribution of Ti and Fe cations along the crystallographic axes, forming a superstructure. Magnetic response measurements show the ferromagnetic feature and band structure, and density of electronic states calculations suggest the occurrence of half-metallicity. For one of the spin orientations, the material behaves like a metal due to strong hybridizations of the 4d-Fe orbitals with 2p-O, and for the other like a semiconductor with band gap of 2.3 eV, thanks to the availability of 3d-Fe and 3d-Ti states in the conduction band. The results demonstrate the multifunctionality of the material for use in spintronics technology.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"194 \",\"pages\":\"Article 109539\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800125002768\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2025/4/2 0:00:00\",\"PubModel\":\"Epub\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125002768","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/4/2 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

材料的现代技术适用性在很大程度上取决于它们的结构和物理性质。在自旋电子学领域,材料设计的重点是多铁性、巨磁阻、半导体铁磁性和半金属性等属性,这有利于基于自旋极化电流的器件的发展。出于这些目的,钙钛矿家族已被证明对自旋技术很有用。本文报道了Ca2TiFeO6材料的合成。晶体学分析表明,其为单斜晶型结构(空间群P21/n),由于Ti和Fe阳离子沿晶轴有序分布,形成上层结构,可归类为双钙钛矿型。磁响应测量显示了铁磁性特征和能带结构,电子态密度计算表明存在半金属丰度。对于其中一个自旋方向,由于4d-Fe轨道与2p-O的强杂化,材料表现得像金属,而对于另一个自旋方向,由于导带中3d-Fe和3d-Ti态的可用性,材料表现得像半导体,带隙为2.3 eV。结果证明了该材料在自旋电子学技术中的多功能性。
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Superstructural arrangement and half-metallic semiconductor nature of the ferromagnetic material Ca2TiFeO6
The modern technological applicability of materials depends substantially on their structural and physical properties. In the area of spintronics, materials design focuses on attributes such as multiferroicity, colossal magnetoresistance, ferromagnetism in semiconductors and half-metallicity, among others, which are conducive to the development of devices based on spin-polarized currents. For these purposes, the perovskite family has proven useful for spin technologies. In this manuscript, the synthesis of the material Ca2TiFeO6 is reported. Crystallographic analysis reveals that it adopts a monoclinic structure (space group P21/n), classifiable as a double perovskite type due to the ordered distribution of Ti and Fe cations along the crystallographic axes, forming a superstructure. Magnetic response measurements show the ferromagnetic feature and band structure, and density of electronic states calculations suggest the occurrence of half-metallicity. For one of the spin orientations, the material behaves like a metal due to strong hybridizations of the 4d-Fe orbitals with 2p-O, and for the other like a semiconductor with band gap of 2.3 eV, thanks to the availability of 3d-Fe and 3d-Ti states in the conduction band. The results demonstrate the multifunctionality of the material for use in spintronics technology.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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