Fe/拓扑绝缘体自旋接触的界面反应。

IF 1.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics Pub Date : 2017-07-01 Epub Date: 2017-07-06 DOI:10.1116/1.4991331
Sarmita Majumder, Karalee Jarvis, Sanjay K Banerjee, Karen L Kavanagh
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引用次数: 5

摘要

作者研究了铁磁体Fe在拓扑绝缘体(TI)、Bi2Se3、Bi2Te3和SiOx/Bi2Te3上沉积和图像化过程中形成的界面层的组成和突发性。这种结构对自旋电子学有潜在的用处。包括界面元素映射在内的截面透射电子显微镜证实,Fe与Bi2Se3在室温附近发生反应,形成5 nm厚的FeSe0.92单晶二元相,主要取向为(001),晶格条纹间距为0.55 nm。相反,Fe/Bi2Te3形成多晶Fe/TI界面合金,可以通过添加蒸发的SiOx将Fe与TI分离来阻止。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Interfacial reactions at Fe/topological insulator spin contacts.

The authors study the composition and abruptness of the interfacial layers that form during deposition and patterning of a ferromagnet, Fe on a topological insulator (TI), Bi2Se3, Bi2Te3, and SiOx/Bi2Te3. Such structures are potentially useful for spintronics. Cross-sectional transmission electron microscopy, including interfacial elemental mapping, confirms that Fe reacts with Bi2Se3 near room temperature, forming an abrupt 5 nm thick FeSe0.92 single crystalline binary phase, predominantly (001) oriented, with lattice fringe spacing of 0.55 nm. In contrast, Fe/Bi2Te3 forms a polycrystalline Fe/TI interfacial alloy that can be prevented by the addition of an evaporated SiOx separating Fe from the TI.

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CiteScore
2.70
自引率
0.00%
发文量
146
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