基于SiNOI缝隙和条形波导的镜面端接Mach-Zehnder干涉仪,用于可见光传感应用

IF 4.1 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Frontiers in Nanotechnology Pub Date : 2023-04-26 DOI:10.3389/fnano.2023.1121537
A. Sultan, Y. Sabry, Ahmed Samir, Mostafa A. El-Aasser
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引用次数: 0

摘要

在这项工作中,提出了一种基于氮化硅(SiN)波导的高灵敏度传感器,可用于利用可见光进行气体传感。整个传感器波导使用二氧化硅(SiO2)包层,而传感臂使用流体包层,如水。该器件基于环镜端接(LMT) Mach-Zehnder干涉仪(MZI),其中参考臂暴露在参考SiO2介质中,而传感臂暴露在传感介质中,导致波导包层的折射率发生变化。通过对结构各部件的设计性能逐一优化,实现传感器性能的整体优化。分析了两种类型的波导对气体介质的灵敏度,以比较它们的灵敏度,并选择出器件灵敏度最高的波导尺寸。横向电(TE)极化在本研究中考虑了条带波导,其中建立了较高的灵敏度相对于横向磁(TM)极化。利用模态求解器研究并验证了狭缝波导在传感区域的场约束,其中利用有限差分本征模和有限差分时域求解得到了最优尺寸。该传感器的传感臂长度仅为150 μm,器件灵敏度约为1320 nm/RIU,在650 nm波长处的FOM高达641 RIU−1,这是作者所知的最高FOM。采用更长的传感臂可以获得更高的FOM值。
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Mirror-terminated Mach-Zehnder interferometer based on SiNOI slot and strip waveguides for sensing applications using visible light
In this work, a highly sensitive sensor based on silicon nitride (SiN) waveguide is proposed that can be used for gas sensing using visible light. The whole sensor waveguide uses a silicon dioxide (SiO2) cladding while the sensing arm uses a fluidic cladding such as water. The proposed device is based on loop-mirror terminated (LMT) Mach-Zehnder interferometer (MZI), where the reference arm is exposed to the reference SiO2 medium, while the sensing arm is exposed to the sensing medium leading to a change in the refractive index of the waveguide cladding. The sensor performance is overall optimized by optimizing the design performance of all the components of the structure one by one. The waveguide sensitivity of both strip and slot types is analyzed for gaseous medium in order to compare their sensitivities and select the dimensions of the waveguide that results in the highest device sensitivity. Transverse-electric (TE) polarization is considered in this study for strip waveguide, where a higher sensitivity is founded with respect to the transverse-magnetic (TM) polarization. The field confinement in the slot waveguide in the sensing region is investigated and verified with a mode solver, where the optimum dimensions are obtained using finite difference eigenmode and finite difference time domain solvers. With a sensing arm length of 150 μm only, the proposed sensor achieves a device sensitivity of about 1,320 nm/RIU and a figure-of-merit (FOM) as high as 641 RIU−1 at the wavelength of 650 nm, which is the highest reported FOM up to the author’s knowledge. Higher values of the FOM are possible by employing a longer sensing arm.
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来源期刊
Frontiers in Nanotechnology
Frontiers in Nanotechnology Engineering-Electrical and Electronic Engineering
CiteScore
7.10
自引率
0.00%
发文量
96
审稿时长
13 weeks
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