蒸发舟-衬底距离对氧化锌纳米结构形成的影响

I. Ahmad, Y. Mohammed, Khaldoon N. Abbas
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引用次数: 0

摘要

氧化锌(ZnO)是一种重要的半导体材料,对半导体工业技术的发展做出了重要贡献。采用热化学气相沉积(TCVD)技术在大气压下,在不同的蒸发舟皿-衬底距离下合成了ZnO纳米结构。通过在石英管内氧化二水醋酸锌粉末而不是在石英管外氧化来制备ZnO NSs。研究了改变蒸发舟皿-衬底距离(2.5、4.5、6.5和8.5cm)对ZnO NSs光学和结构性能的影响。采用紫外可见分光光度计、X射线衍射(XRD)技术和光致发光(PL)光谱对ZnO纳米结构进行了表征,以评价其光学和结构性能。随着分离距离分别从(2.5cm)增加到(8.5cm),光学带隙测量结果显示出从(3.25eV)到(3.05eV的红移。XRD技术证实金属氧化物为ZnO,具有六方结构。样品的平均晶粒尺寸从63.4nm减小到58.3nm,分离距离从2.5cm增加到8.5cm。此外,主衍射峰的尖锐度、强强度和窄宽度表明所制备的ZnO NSs具有高结晶度。ZnO NSs的PL光谱显示,所有制备的样品都有宽的深能级发射。通过TCVD技术生长的ZnO NSs可以在纳米光伏和纳米光电探测器中提供潜在的应用。
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Effect of Evaporation Boat-Substrate Distance on the Formation of Zinc Oxide Nanostructures
Zinc Oxide (ZnO) is one of the important semiconductor materials which contribute effectively to the development of the semiconductor industry technology. ZnO nanostructures (NSs) were synthesized using thermal chemical vapor deposition (TCVD) technique under atmospheric pressure at different evaporation boat-substrate distances. ZnO NSs were prepared by oxidizing Znic acetate dihydrate powder within quartz tube instead of its outside. The effect of change evaporation boat-substrate distance (2.5, 4.5, 6.5 and 8.5 cm) on the optical and structural properties of ZnO NSs were studied. ZnO NSs were characterized by UV-Visible spectrophotometer, X-ray diffraction (XRD) technique and photoluminescence (PL) spectroscopy to evaluate its optical and structural properties. Optical band gap measurement results exhibited a red-shifted from (3.25 eV) to (3.05 eV), as the separation distance increased from (2.5 cm) to (8.5 cm), respectively. XRD technique confirms that metal oxide was ZnO and having hexagonal structure. The average crystallite size of the samples was decreased from 63.4 to 58.3 nm, with the increase in separation distance from 2.5 to 8.5 cm. Also, the sharpness, strong intensity and narrow width of dominant diffraction peak indicate the high crystallinity of the prepared ZnO NSs. The PL spectra of the ZnO NSs revealed a wide deep-level emission for all the prepared samples. ZnO NSs grown by TCVD technique may provide potential applications in nano-photovoltaics and nano-photodetectors.
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