{"title":"Au/n-GaN独立肖特基结构的电容-频率(C-V–f)和电导-频率(G-V–f","authors":"H. Mazari, K. Ameur, R. Khelifi","doi":"10.12816/0048929","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":16506,"journal":{"name":"Journal of New Technology and Materials","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2018-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Capacitance–frequency (C-V–f) and conductance–frequency (G-V–f) characteristics of Au/n-GaN freestanding Schottky structure\",\"authors\":\"H. Mazari, K. Ameur, R. Khelifi\",\"doi\":\"10.12816/0048929\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":16506,\"journal\":{\"name\":\"Journal of New Technology and Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2018-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of New Technology and Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.12816/0048929\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of New Technology and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.12816/0048929","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}