Co掺杂对二氧化锰薄膜功能性能的影响

IF 2.4 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Journal of Molecular and Engineering Materials Pub Date : 2021-03-01 DOI:10.1142/s2251237321500039
Bellal Sadouki, Hadj Benhebal, B. Benrabah, Abdelmalek Kharroubi
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引用次数: 0

摘要

采用溶胶-凝胶浸涂法在Pyrex玻璃衬底上沉积了Co浓度为1、3、5和7at.%的Co掺杂[MnO2薄膜。对沉积的薄膜的结构、形态、光学和电学性能进行了表征。XRD光谱证实,所有样品都具有[公式:见正文]-MnO2的四方相。FTIR光谱显示所有样品中都存在Mn–O。AFM测量表明,薄膜表面受到钴含量掺入的影响。用紫外-可见光谱仪记录了未掺杂和Co掺杂MnO2薄膜的透射光谱。发现光学间隙在2.60–2.51-eV范围内。这种减少是由于存在锰空位和/或氧缺陷。根据在不同钴含量下显示半圆弧的复阻抗测量,提出了等效并联[公式:见正文]电路。
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Effect of Co Doping on the Functional Properties of MnO2 Thin Films
Thin films of Co-doped [Formula: see text]-MnO2 have been deposited on Pyrex glass substrates by the sol–gel dip-coating method with Co concentrations of 1, 3, 5 and 7 at.%. The deposited thin films were characterized for their structural, morphological, optical and electrical properties. The XRD spectra confirm that all the samples have tetragonal phase of [Formula: see text]-MnO2. FTIR spectra reveal the presence of Mn–O in all of the samples. AFM measurements indicate that the surfaces of films have been affected with cobalt content incorporation. Transmittance spectra of the undoped and Co-doped MnO2 thin films were recorded by a UV–vis spectrometer. Optical gap was found to be in the 2.60–2.51-eV scale. This decrease is due to the presence of manganese vacancies and/or oxygen defects. From the complex impedance measurements that show semicircular arcs at different cobalt contents, an equivalent parallel [Formula: see text] electrical circuit has been proposed.
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来源期刊
Journal of Molecular and Engineering Materials
Journal of Molecular and Engineering Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-
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