基于DFT的掺镍WS2单层SF6分解气体检测方法

IF 2.5 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IETE Technical Review Pub Date : 2022-11-18 DOI:10.1080/02564602.2022.2143916
S. Sarkar, Papiya Debnath, Debashis De, M. Chanda
{"title":"基于DFT的掺镍WS2单层SF6分解气体检测方法","authors":"S. Sarkar, Papiya Debnath, Debashis De, M. Chanda","doi":"10.1080/02564602.2022.2143916","DOIUrl":null,"url":null,"abstract":"In this paper, we investigated Ni-doped WS2 (Ni@WS2) to detect the H2S, SO2, SOF2, and SO2F2 gases, which are also decomposition gases of SF6 (sulphur hexafluoride). Hence, Electron Difference density, adsorption length and energy, band structure (B.S.), charge transfer, and density of states (DOS) are detailed and studied in depth. The adsorption energy of SF6 decomposition gases i.e. H2S, SO2, SOF2, SO2F2 on Ni@WS2 are found to be −1.3, −1.46, −1.64, and −1.8 eV, respectively, which is superior as compared to other materials. It has been observed through the band structure analysis that after adsorption of SF6 decomposed gas on Ni modified WS2 bandgap reduces, and as a result, conductivity also changes. The dip in bandgap after adsorption of H2S, SO2, SOF2, and SO2F2 on Ni decorated WS2 can be arranged as Ni@WS2@SO2F2> Ni@WS2@SOF2> Ni@WS2@H2S > Ni@WS2@SO2. In brief, these investigations are very efficacious for detecting H2S, SO2, SOF2, and SO2F2 gases, by Ni-doped WS2 monolayer.","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"40 1","pages":"621 - 631"},"PeriodicalIF":2.5000,"publicationDate":"2022-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A DFT Based Approach to Sense the SF6 Decomposed Gases Using Ni-doped WS2 Monolayer\",\"authors\":\"S. Sarkar, Papiya Debnath, Debashis De, M. Chanda\",\"doi\":\"10.1080/02564602.2022.2143916\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we investigated Ni-doped WS2 (Ni@WS2) to detect the H2S, SO2, SOF2, and SO2F2 gases, which are also decomposition gases of SF6 (sulphur hexafluoride). Hence, Electron Difference density, adsorption length and energy, band structure (B.S.), charge transfer, and density of states (DOS) are detailed and studied in depth. The adsorption energy of SF6 decomposition gases i.e. H2S, SO2, SOF2, SO2F2 on Ni@WS2 are found to be −1.3, −1.46, −1.64, and −1.8 eV, respectively, which is superior as compared to other materials. It has been observed through the band structure analysis that after adsorption of SF6 decomposed gas on Ni modified WS2 bandgap reduces, and as a result, conductivity also changes. The dip in bandgap after adsorption of H2S, SO2, SOF2, and SO2F2 on Ni decorated WS2 can be arranged as Ni@WS2@SO2F2> Ni@WS2@SOF2> Ni@WS2@H2S > Ni@WS2@SO2. In brief, these investigations are very efficacious for detecting H2S, SO2, SOF2, and SO2F2 gases, by Ni-doped WS2 monolayer.\",\"PeriodicalId\":13252,\"journal\":{\"name\":\"IETE Technical Review\",\"volume\":\"40 1\",\"pages\":\"621 - 631\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2022-11-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IETE Technical Review\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://doi.org/10.1080/02564602.2022.2143916\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IETE Technical Review","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.1080/02564602.2022.2143916","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 2

摘要

在本文中,我们研究了Ni掺杂的WS2(Ni@WS2)以检测H2S、SO2、SOF2和SO2F2气体,这些气体也是SF6(六氟化硫)的分解气体。因此,对电子差密度、吸附长度和能量、能带结构(B.S.)、电荷转移和态密度(DOS)进行了详细和深入的研究。SF6分解气体,即H2S、SO2、SOF2、SO2F2在Ni@WS2被发现为−1.3、−1.46、−1.64和−1.8 eV,这与其他材料相比是优越的。通过能带结构分析观察到,在Ni改性的WS2上吸附SF6分解气体后,带隙减小,电导率也随之变化。H2S、SO2、SOF2和SO2F2在Ni修饰的WS2上吸附后的带隙下降可以安排为Ni@WS2@SO2F2>Ni@WS2@SOF2>Ni@WS2@H2S > Ni@WS2@简而言之,这些研究对于通过Ni掺杂的WS2单层检测H2S、SO2、SOF2和SO2F2气体是非常有效的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A DFT Based Approach to Sense the SF6 Decomposed Gases Using Ni-doped WS2 Monolayer
In this paper, we investigated Ni-doped WS2 (Ni@WS2) to detect the H2S, SO2, SOF2, and SO2F2 gases, which are also decomposition gases of SF6 (sulphur hexafluoride). Hence, Electron Difference density, adsorption length and energy, band structure (B.S.), charge transfer, and density of states (DOS) are detailed and studied in depth. The adsorption energy of SF6 decomposition gases i.e. H2S, SO2, SOF2, SO2F2 on Ni@WS2 are found to be −1.3, −1.46, −1.64, and −1.8 eV, respectively, which is superior as compared to other materials. It has been observed through the band structure analysis that after adsorption of SF6 decomposed gas on Ni modified WS2 bandgap reduces, and as a result, conductivity also changes. The dip in bandgap after adsorption of H2S, SO2, SOF2, and SO2F2 on Ni decorated WS2 can be arranged as Ni@WS2@SO2F2> Ni@WS2@SOF2> Ni@WS2@H2S > Ni@WS2@SO2. In brief, these investigations are very efficacious for detecting H2S, SO2, SOF2, and SO2F2 gases, by Ni-doped WS2 monolayer.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IETE Technical Review
IETE Technical Review 工程技术-电信学
CiteScore
5.70
自引率
4.20%
发文量
48
审稿时长
9 months
期刊介绍: IETE Technical Review is a world leading journal which publishes state-of-the-art review papers and in-depth tutorial papers on current and futuristic technologies in the area of electronics and telecommunications engineering. We also publish original research papers which demonstrate significant advances.
期刊最新文献
Radiation Effects in VLSI Circuits – Part I: Historical Perspective Mental Wellness and Academic Achievement: Navigating Entrance Tests with Confidence Deep Learning Approach for Gait Detection for Precise Stimulation of FES to Correct Foot Drop A New Distance Measurement Method for Perceptual Image Hashing Forging Connections: Integrating Indian Knowledge Systems in Higher Education
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1