拓扑近藤绝缘体清洁表面形成的最新进展和在那里观察到的拓扑表面态

IF 2.9 Q3 CHEMISTRY, PHYSICAL Electronic Structure Pub Date : 2022-08-02 DOI:10.1088/2516-1075/ac8631
Y. Ohtsubo, S. Kimura, F. Iga
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引用次数: 1

摘要

在近藤绝缘体(KIs)中提出和观察到的特殊金属电子态,其带隙在低温下打开,源于巡回电子和局域电子之间的近藤效应,在这十年中引起了相当大的关注,因为它表明在这种KIs中存在强电子相关和非平凡拓扑序(TO),即拓扑近藤绝缘体(TKIs)。然而,对这些状态的实验研究得出了有争议的结论,主要是由于TKI候选者六硼化钐(SmB6)和十二硼化镱(YbB12)的单晶表面的困难和不均匀性。在这篇文章中,我们回顾了专注于TKI候选者的表面原子和电子结构的研究,以及形成它们均匀、明确的清洁表面的最新进展。由于表面形成均匀,通过使用自旋和角度分辨光电子能谱,SmB6和YbB12中的表面电子态及其非平凡to得到了很好的阐明。
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Recent progress in clean-surface formation of topological Kondo insulators and topological surface states observed there
The peculiar metallic electronic states proposed and observed in Kondo insulators (KIs), whose bandgap opens at low temperature derived from the Kondo effect between itinerant and localized electrons, have attracted considerable attention in this decade, because it suggests the coexistence of strong electron correlation and non-trivial topological order (TO) in such KIs, namely topological Kondo insulators (TKIs). However, experimental studies of these states have led to controversial conclusions mainly owing to the difficulty and inhomogeneity of the single crystal surfaces of the TKI candidates, samarium hexaboride (SmB6) and ytterbium dodecaboride (YbB12). In this article, we review studies focused on the surface atomic and electronic structures of TKI candidates and recent progress to form homogeneous, well-defined clean surfaces of them. Due to the homogeneous surface formation, the surface electronic states and their non-trivial TO are elucidated well in SmB6 and YbB12, by using spin- and angle-resolved photoelectron spectroscopy.
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来源期刊
CiteScore
3.70
自引率
11.50%
发文量
46
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