混合等离子体量子发射器中的光开关量子电动力学

Chip Pub Date : 2023-09-01 DOI:10.1016/j.chip.2023.100060
Yuan Liu , Hongwei Zhou , Peng Xue , Linhan Lin , Hong-Bo Sun
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引用次数: 0

摘要

无环境去噪效应的量子态的设计和制备对于开发具有鲁棒性的片上量子系统至关重要。一种很有前途的策略是利用量子态叠加来构建无退相干子空间(DFS),这被称为暗态。通常,暗态的激发依赖于两个量子位上的反相位匹配,并且量子位之间的距离是波长范围的,这限制了紧凑型量子芯片的发展。在目前的工作中,提出了一种混合等离子体量子发射器,该发射器由等离子体纳米腔介导的强相关量子发射器组成。通过将等离子体损失从缺点变为优点,通过快速衰减叠加的亮态并制备衰减率降低3个数量级的亚100nm暗态,打破了反相位匹配规则。更有趣的是,通过光子阻断,暗态可以光学地切换到具有增强亮度的单光子发射器,零延迟下的量子二阶相关函数显示出低至0.02的宽范围可调谐性。
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Photoswitchable quantum electrodynamics in a hybrid plasmonic quantum emitter

The design and preparation of quantum states free from environmental decohering effects is critically important for the development of on-chip quantum systems with robustness. One promising strategy is to harness quantum state superposition to construct decoherence-free subspace (DFS), which is termed dark state. Typically, the excitation of dark states relies on anti-phase-matching on two qubits and the inter-qubit distance is of wavelength scale, which limits the development of compact quantum chips. In the current work, a hybrid plasmonic quantum emitter was proposed, which was composed of strongly correlated quantum emitters intermediated by a plasmonic nanocavity. Through turning the plasmonic loss from drawback into advantage, the anti-phase-matching rule was broken by rapidly decaying the superposed bright state and preparing a sub-100 nm dark state with decay rate reduced by 3 orders of magnitudes. More interestingly, the dark state could be optically switched to a single-photon emitter with enhanced brightness through photon-blockade, with the quantum second order correlation function at zero delay showing a wide range of tunability down to 0.02.

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