氧化铽薄膜的MOCVD合成及其光学性能研究

Chemical Vapor Deposition Pub Date : 2015-04-24 DOI:10.1002/cvde.201507153

Svetlana V. Belaya, Vladimir V. Bakovets, Igor P. Asanov, Ilya V. Korolkov, Veronika S. Sulyaeva

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引用次数: 17

摘要

采用金属-有机(MO)气相沉积技术，在硅衬底上制备了氧化铽薄膜。在此过程中实现了倍半氧化铽(c型)。在800℃的空气中退火，然后在空气中冷却，导致Tb4O7的形成。退火膜的氩离子腐蚀导致Tb4+还原为Tb3+。测定了氧化铽薄膜在空气中退火前后的光学Eg，研究了光致发光光谱，并测量了薄膜的折射率和介电常数。

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MOCVD Synthesis of Terbium Oxide Films and their Optical Properties†

Terbium oxide films are deposited on silicon substrates by metal-organic (MO)CVD from a vapor of Tb(thd)₃ in argon. Terbium sesquioxide (C-form) is realized in this process. Annealing of the films in air at 800 °C, followed by cooling in air, leads to the formation of Tb₄O₇. The Ar ion-etching of the annealed films causes a reduction of Tb⁴⁺ to Tb³⁺. Optical E_g is estimated, photoluminescence spectra are investigated, and refractive indexes and dielectric constants are measured for terbium oxide films before and after annealing in air.

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来源期刊

Chemical Vapor Deposition 工程技术-材料科学：膜

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0.00%

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审稿时长

>12 weeks

期刊介绍： Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.

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