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引用次数: 0
摘要
本文研究并报道了Al0.1Ga0.9N/GaN超晶格结构的AlGaN火焰光电探测器的制备过程。AlGaN火焰光电探测器具有较低的暗电流(−1.17×10−10 a，偏置为−5 V)和较大的光电流(−2.14×10−5 a，偏置为-5 V)对暗电流的抑制比，大于5个数量级。在-5 V偏置下，350 nm处的响应度为0.194 a /W。在反向偏置5 V时，量子效率η为0.687。
This study characterizes and reports on the fabrication process of AlGaN flame photodetectors with an Al0.1Ga0.9N/GaN superlattice structure. The AlGaN flame photodetectors exhibited a low dark current (∼1.17×10−10 A at bias of −5 V) and large rejection ratio of photocurrent (∼2.14×10−5 A at bias of -5 V) to dark current, which is greater than five orders of magnitude. Responsivity at 350 nm at a bias of -5 V was 0.194 A/W. Quantum efficiency, η, was 0.687 at a reverse bias of 5 V.
期刊介绍：
Advances in Materials Science and Engineering is a broad scope journal that publishes articles in all areas of materials science and engineering including, but not limited to:
-Chemistry and fundamental properties of matter
-Material synthesis, fabrication, manufacture, and processing
-Magnetic, electrical, thermal, and optical properties of materials
-Strength, durability, and mechanical behaviour of materials
-Consideration of materials in structural design, modelling, and engineering
-Green and renewable materials, and consideration of materials’ life cycles
-Materials in specialist applications (such as medicine, energy, aerospace, and nanotechnology)
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