锑化钪半导体温度相关超声研究

Alok Gupta, S. Srivastava, K. Thapa
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引用次数: 0

摘要

本文研究了弹性波在锑化钪半导体中的传播特性。在锑化钪半导体中,发现了NaCl结构。研究了立方锑化钪半导体的超声衰减、声速、声耦合常数和热弛豫时间等超声特性。为评价上述超声性能,计算了二阶和三阶弹性常数。研究了不同温度下的第二和第三弹性常数。利用弹性常数计算了纵、剪切速度。纵、剪切速度随温度升高而增大。纵波和横波在立方材料中的衰减随温度的升高而增大。
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Temperature Dependent Ultrasonic Study in Scandium Antimonide Semiconductor
In this paper analysis of wave propagation of elastic wave in scandium antimonide semiconductor was investigated. In scandium antimonide semiconductor, NaCl structure was found. Ultrasonic properties like ultrasonic attenuation, sound velocities, acoustic coupling constants, and thermal relaxation time have been investigated in cubic scandium antimonide semiconductor. Second and third order elastic constant have been computed for the evaluation of above said ultrasonic properties. Second and third elastic constant was studied at the various temperatures. Longitudinal and shear velocity was calculated by using the elastic constant. Longitudinal and shear velocity increase with increase the temperature. Ultrasonic attenuation either from longitudinal or shear wave propagation in cubic materials increase with increase the temperature.
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E-journal of Chemistry
E-journal of Chemistry CHEMISTRY, MULTIDISCIPLINARY-
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