基于砷化镓衬底的宽带大功率衰减器

相豫 程
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Broadband High Power Attenuator Based on GaAs Substrate
The attenuator is a power gain control element, which is used in various communication amplifier circuit scenarios to adjust the signal or power to achieve the optimal state of the circuit. With the joint efforts of scientific researchers in recent years, MMIC technology has made breakthroughs in various aspects, and the current research direction has moved towards broadband, high power and other directions. The attenuator involved in this paper provides a reference design and specific tape-out for high power and ultra-wideband while realizing localization. Its bare chip size is 1.2 × 1.0 mm, which can meet the 2 × 2 mm package in QFN, the attenuation is 5dB, the frequency band range is DC-40GHz, and the power tolerance can reach 2 W.
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