2.2 ~ 2.6 um高光敏InGaAs/InP光电探测器的分子束外延

{"title":"2.2 ~ 2.6 um高光敏InGaAs/InP光电探测器的分子束外延","authors":"E. Vasilkova, E. Pirogov, M. Sobolev, E. V. Ubiyvovk, A. Mizerov, P. Seredin","doi":"10.17308/kcmf.2023.25/10972","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":52328,"journal":{"name":"Kondensirovannye Sredy Mezhfaznye Granitsy","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Molecular beam epitaxy of metamorphic buffer for InGaAs/InP photodetectors with high photosensitivity in the range of 2.2-2.6 um\",\"authors\":\"E. Vasilkova, E. Pirogov, M. Sobolev, E. V. Ubiyvovk, A. Mizerov, P. Seredin\",\"doi\":\"10.17308/kcmf.2023.25/10972\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":52328,\"journal\":{\"name\":\"Kondensirovannye Sredy Mezhfaznye Granitsy\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Kondensirovannye Sredy Mezhfaznye Granitsy\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.17308/kcmf.2023.25/10972\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Materials Science\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Kondensirovannye Sredy Mezhfaznye Granitsy","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.17308/kcmf.2023.25/10972","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Materials Science","Score":null,"Total":0}