室温下la掺杂ZnO薄膜的结构和光学性质

IF 0.9 4区 材料科学 Q3 MATERIALS SCIENCE, CERAMICS Processing and Application of Ceramics Pub Date : 2023-01-01 DOI:10.2298/pac2302107s
I. Sugihartono, B. Soegijono, E. Handoko, T. Tiam, A. Umar
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引用次数: 0

摘要

采用超声喷雾热解法在Si衬底上制备了La掺杂ZnO (La含量分别为0、1、5和7 wt.%)薄膜,频率为1.7MHz,加热温度为450℃。C敷15分钟。分析了La的加入对ZnO薄膜结构和光学性能的影响。x射线衍射图证实,当ZnO中La含量为7wt .%时,所有制备的薄膜都具有多晶六方纤锌矿结构,在(002)平面上具有高度优选的织构。原子力显微镜分析证实了La的加入对表面形貌的影响,并且随着La含量的增加,表面的均方根粗糙度趋于提高。la掺杂薄膜的光学带隙能小于未掺杂ZnO薄膜的带隙能。制备的薄膜的光致发光特性证实,当波长为1wt时,DLE在711 nm处有明显的红移。ZnO结构中掺入了%的La。结果表明,在氧化锌结构中加入La会使氧原子与La形成强键。
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Structure and optical properties of La-doped ZnO thin films at room temperature
La-doped ZnO (with 0, 1, 5 and 7 wt.% La) thin films were deposited on Si substrates by ultrasonic spray pyrolysis, using frequency of 1.7MHz, and heated at 450?C for 15min. The effect of La addition on the structural and optical properties of ZnO thin films was analysed. X-ray diffraction patterns confirmed that all prepared thin films had a polycrystalline hexagonal wurtzite structure with highly preferred texture in the (002) plane in the case of the ZnO containing 7 wt.% La. Atomic force microscopy analyses confirmed that the surface morphology is affected by La addition and the root mean square (RMS) roughness tended to be higher by increasing La content. The optical band gap energies of the La-doped thin films are smaller than that of the undoped ZnO. The photoluminescence properties of the prepared thin films confirmed that there was a significant redshift of DLE to wavelength of 711 nm when 1wt.% of La was incorporated in ZnO structure. It was proposed that the incorporation of La into the ZnO structure caused the oxygen atoms to have a strong bond with La.
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来源期刊
Processing and Application of Ceramics
Processing and Application of Ceramics MATERIALS SCIENCE, CERAMICS-
CiteScore
1.90
自引率
9.10%
发文量
14
审稿时长
10 weeks
期刊介绍: Information not localized
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