热压氮化硅的氧化动力学

G.N. Babini, P. Vincenzini
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引用次数: 0

摘要

推导了一个用于评估热压氮化硅(HPSN)的简化模型,该模型考虑了晶界相的数量和类型以及Si3N4/氧化物反应界面处的成分。事实证明,该模型适用于解释包括MgO、CeO2、(CeO2+SiO2)、(Y2O3+SiO2)、(MgO+Y2O3)添加剂在内的多种材料的氧化行为。关于如何提高HPSN的抗氧化性,也可以进行一些推导。
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Oxidation kinetics of hot-pressed silicon nitride

A simplified model for evaluation of hot-pressed silicon nitride (HPSN) has been derived which accounts for the amount and type of grain boundary phase and for the composition at the Si3N4/oxide reaction interface. The model proved suitable for explaining the oxidation behaviour of a wide range of materials including MgO, CeO2, (CeO2 + SiO2), (Y2O3 + SiO2), (MgO + Y2O3) additives. Some deductions are also possible on how to improve the oxidation resistance of HPSN.

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Materials Chemistry Materials Chemistry Author index On the separation of the contributions of powder particle cores and intergranular contacts to the electric resistivity of the compressed powder materials Vingt ans apres: To Karplus or not to Karplus?
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