氧化铟(In2O3)薄膜中的非稳态光电流和全息记录

I. Sokolov, V. Kulikov, S. Mailis, E. Tzamali, Ch. Papademetriou, A. Ikiades, C. Kalpouzos, N. Vainos
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引用次数: 0

摘要

氧化铟薄膜具有有趣的电学和光学特性,具有很高的技术应用潜力。通过直流磁控管或激光溅射生长的氧化铟薄膜的导电性可以在紫外线照射(光子能量>3.5 eV)下进行修饰,从而使薄膜的电学状态从电阻变为纯导电,而最近全息记录已被证明[1],旨在信息存储和处理应用。
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Non-steady-state photocurrents and holographic recording in indium-oxide (In2O3) thin films
Indium-oxide thin films present interesting electrical and optical properties and high potential for technological applications. The conductivity of indium-oxide thin films grown by dc-magnetron or laser sputtering can be modified upon illumination with ultraviolet radiation (photon energy >3.5 eV), resulting in a variable electrical state of the films from a resistive to a purely conductive one, while recently holographic recording has been demonstrated [1] aiming to information storage and processing applications.
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