阿拉斯势垒中与x谷相关的给体杂质态的自旋分裂

Y. Khanin, E. Vdovin
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引用次数: 6

摘要

利用磁隧穿光谱揭示了与阿拉斯势垒中X谷有关的硅给体基态的自旋分裂。在AlAs障壁中,纵向和横向g因子的绝对有效值分别为1.82±0.15和1.11±0.12。
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Spin splitting of X-valley-related donor impurity states in an AlAs barrier
Magnetotunneling spectroscopy is used to reveal the spin splitting of the ground state of Si donors related to the X valley in an AlAs barrier. The absolute effective values of the longitudinal and transverse g factors in the AlAs barrier are found to be equal to 1.82±0.15 and 1.11±0.12, respectively.
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