溶胶-凝胶法制备氧化钴掺杂硅胶改善介电电荷存储

R. K. Abd El Hamid, I. Battisha, N. Shahin
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引用次数: 0

摘要

采用改性溶胶-凝胶法制备了在60 ~ 1300℃范围内烧结的氧化钴的结构、形貌和磁性,分别记录为(SC(60 ~ 1300))。研究烧结温度对制备样品的结晶、表面形貌和磁性行为的影响,利用透射电子显微镜(TEM)和场发射扫描电子显微镜(FESEM)对表面形貌和x射线衍射进行物相鉴定。利用上述技术检测了纳米级硅胶中α-水晶石四方相的存在和形成,以及氧化钴结晶度增强的掺杂样品。研究了FTIR光谱。饱和磁化强度Ms = 0.183,剩余磁化强度Mr = 0.031 emu/g,矫顽力Hc = 46.7Oe。因此,通过提高烧结温度,掺杂co3o4的硅胶网络可以应用于多种电子和工业器件,提高介电电荷存储容量和强度。
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Silica gel doped with cobalt oxide prepared by sol-gel technique; improving dielectric charge storage
The structural, morphology and magnetic properties of Cobalt oxide embedded in silica gel with 10 mol. %, in monolith form, sintered at different temperature ranging from 60 up to 1300ºC, respectively recorded as (SC(60-1300) were prepared by a modified sol gel technique. The sintering temperature effect on the crystallization, surface morphology and magnetic behaviors of the prepared samples will be study, Phase identification by using surface morphology and X-ray diffraction will be study by using Transmission electron microscope (TEM) and Field emission scanning electron microscope imaging (FESEM). The nano-scale presence and the formation of the α-cristobalyte tetragonal phase of silica gel as well as the doped samples with cobalt oxide crystallinity enhancement were detected using the mentioned techniques. FTIR spectra were being study. The saturation magnetization (Ms), remnant magnetization (Mr) and coercive force (Hc), was founded to be equl to 0.183,0.031 emu/g and 46.7Oe respectively. The A. C. conductivity increased by increasing the temperature .Therefore, by increasing the sintering temperature of the silica gel network doped withCo3O4are applicant for several electronic and industrial devices with improved dielectric charge storage capacity and strength.
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