MgxZn1-xO/CdSeyTe1-y界面的光致发光研究:氧化物带隙和带对准的影响

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Pub Date : 2021-06-20 DOI:10.1109/PVSC43889.2021.9519010

Carey Reich, G. Yeung, A. Onno, A. Danielson, Z. Holman, C. Wolden, W. Sampath

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引用次数: 0

摘要

近年来，mgxzn - xo (MZO)作为一种透明的电子接触材料在cdte基太阳能电池中得到了广泛的应用。导带偏移量(CBO)的值以及MZO带隙的值通常被认为是该界面的基本参数，因为理论上CBO对电子的传导和空穴的复合都有很强的影响。然而，在这篇文章中，我们报告了MZO/CdSeTe接口，其中重组似乎与CBO无关。讨论了这些结果的含义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Photoluminescence Study of the MgxZn1-xO/CdSeyTe1-y Interface: The Effect of Oxide Bandgap and Resulting Band Alignment

MgxZn1-xO (MZO) has recently gained popularity as a transparent electron contact in CdTe-based solar cells. The value of the conduction band offset (CBO) and, hence, of the MZO bandgap are often considered essential parameters of this interface, as—in theory—the CBO has a strong impact on both the conduction of electrons and the recombination of holes. However, in this contribution, we report MZO/CdSeTe interfaces where recombination appears to be independent of the CBO. The implications of such results are discussed.

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2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)

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