基于二氧化钒金属绝缘体过渡的可调谐电容器和微波滤波器

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) Pub Date : 2015-06-21 DOI:10.1109/TRANSDUCERS.2015.7180923

W. Vitale, M. Fernandez-Bolaños, C. Moldovan, A. Paone, A. Schuler, A. Ionescu

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引用次数: 5

摘要

本文报道了一种基于二氧化钒(VO2)金属-绝缘体过渡(MIT)的新型微波可调谐电容器的制备、建模和表征。我们提出了基于vo2的电容器在易于集成，设计和高频性能方面优于微波可重构电子器件的替代技术。我们通过制造插入损耗<;2db至40ghz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Tunable capacitors and microwave filters based on vanadium dioxide metal-insulator transition

We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2). We present the advantages of VO2-based capacitors over alternative technologies for microwave reconfigurable electronics in terms of ease of integration, design and performance at high frequency. We show the potential of the proposed devices for RF reconfigurable electronics by fabricating a tunable bandstop filter (22.5-19.8 GHz) with insertion loss <; 2 dB up to 40 GHz.

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2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

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