Investigation of Electrical Properties of CIGS/n-Si Heterojunction Solar Cell in Darkness and Light Environments

We have produced an Ag/CIGS/n-Si/Al heterojunction solar cell for this study. CIGS ultrathin film grown by PLD system have been examined in terms of the morphology, crystalline and optical properties. The crystalline size of CIGS ultrathin film, which has a single crystal structure, has been calculated by Scherrer equation. Micro strain and dislocation density of CIGS ultrathin films have been determined. Indium-rich CIGS ultrathin film’s stoichiometric transfer was deviated by a little. J-V curves of CIGS/n-Si solar cell and its electrical properties have been investigated as well as determined for the darkness and illumination environments. The ideality factor, serial resistance and barrier height of the solar cell were calculated using the conventional J-V, Norde and Cheung-Cheung methods. The electrical parameters of CIGS solar cells have also been investigated for both environments and the results have been discussed in this study. Keywords—CIGS ultrathin film, PLD, solar cell, heterojunction,