{"title":"单面泵浦太赫兹增压器的设计与灵敏度分析","authors":"M. Vahdani, M. Fakhari, N. H. Matlis, F. Kärtner","doi":"10.1109/IRMMW-THz50926.2021.9567101","DOIUrl":null,"url":null,"abstract":"We present the design of a THz driven booster which is capable of accelerating electrons from 55 keV up to above 430 keV kinetic energy. This device is a 3-layer segmented structure and requires a 400-µJ single-cycle THz pulse with center frequency at 300 GHz. Sensitivity of the output beam dynamics to the input parameters and manufacturing tolerances of the booster is also investigated in this paper.","PeriodicalId":6852,"journal":{"name":"2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)","volume":"284 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and sensitivity analysis of a single sided pumped THz booster\",\"authors\":\"M. Vahdani, M. Fakhari, N. H. Matlis, F. Kärtner\",\"doi\":\"10.1109/IRMMW-THz50926.2021.9567101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the design of a THz driven booster which is capable of accelerating electrons from 55 keV up to above 430 keV kinetic energy. This device is a 3-layer segmented structure and requires a 400-µJ single-cycle THz pulse with center frequency at 300 GHz. Sensitivity of the output beam dynamics to the input parameters and manufacturing tolerances of the booster is also investigated in this paper.\",\"PeriodicalId\":6852,\"journal\":{\"name\":\"2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)\",\"volume\":\"284 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-08-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRMMW-THz50926.2021.9567101\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRMMW-THz50926.2021.9567101","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and sensitivity analysis of a single sided pumped THz booster
We present the design of a THz driven booster which is capable of accelerating electrons from 55 keV up to above 430 keV kinetic energy. This device is a 3-layer segmented structure and requires a 400-µJ single-cycle THz pulse with center frequency at 300 GHz. Sensitivity of the output beam dynamics to the input parameters and manufacturing tolerances of the booster is also investigated in this paper.
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