准一维M2N3Se8 (M2N3S8)的合成与应用

Hak Ki Yu
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引用次数: 0

摘要

近年来研究较为活跃的二维材料研究,通过相关材料膨胀的概念,对一维材料的研发产生了影响。虽然一维纳米线材料有望推动电子应用的进步,但在材料多样性方面仍有许多有待探索的地方。我们想介绍各种基于vdW(范德华)键的准一维材料,其化学成分为M2N3Se8 (M2N3S8),这是最近正在研究的。我们想解释在合成材料过程中可能出现的多态性结构和器件应用特性,以及通过M和N过渡金属合金化和Se-S取代进行带隙工程的可能性。通过这一点,我们打算提出本文提出的准一维M2N3Se8 (M2N3S8)材料体系的各种应用可能性。
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Quasi-1D M2N3Se8 (M2N3S8): Synthesis and applications
2D material research, which has been actively researched recently, has had an impact on 1D material research and development through the concept of related material expansion. Although 1D nanowire materials are expected to fuel advances in electronic applications, there is still much to be explored in terms of material diversity. We would like to introduce a variety of quasi-1D materials based on vdW (van der Waals) bonding having a chemical composition of M2N3Se8 (M2N3S8), which is being studied recently. We would like to explain the polymorphism structure and device application characteristics that can occur during the synthesis materials, and the possibility of band-gap engineering through alloying of M and N transition metals and Se-S substitution. Through this, we intend to propose various possibilities of application of the quasi 1D M2N3Se8 (M2N3S8)material system proposed in this paper.
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