F. Vidimari, S. Pellegrino, M. Caldironi, A. Di Paola, R. Chen
{"title":"通过Co或Fe离子注入和LPE再生获得InP中的高电阻率层","authors":"F. Vidimari, S. Pellegrino, M. Caldironi, A. Di Paola, R. Chen","doi":"10.1109/ICIPRM.1991.147422","DOIUrl":null,"url":null,"abstract":"The possibility of obtaining semiinsulating buried layers in InP by Co or Fe ion implantation and subsequent epitaxial regrowth is discussed. Electrical characteristics measurements of Fe and Co implanted InP indicate resistivities in excess of 10/sup 7/ Omega -cm critical voltages of 2.5 V, and current densities as low as 20 mA/cm/sup 2/ at critical voltage.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"29 1","pages":"500-503"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High resistivity layers in InP obtained by Co or Fe ion implantation and LPE regrowth\",\"authors\":\"F. Vidimari, S. Pellegrino, M. Caldironi, A. Di Paola, R. Chen\",\"doi\":\"10.1109/ICIPRM.1991.147422\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The possibility of obtaining semiinsulating buried layers in InP by Co or Fe ion implantation and subsequent epitaxial regrowth is discussed. Electrical characteristics measurements of Fe and Co implanted InP indicate resistivities in excess of 10/sup 7/ Omega -cm critical voltages of 2.5 V, and current densities as low as 20 mA/cm/sup 2/ at critical voltage.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"29 1\",\"pages\":\"500-503\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147422\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147422","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High resistivity layers in InP obtained by Co or Fe ion implantation and LPE regrowth
The possibility of obtaining semiinsulating buried layers in InP by Co or Fe ion implantation and subsequent epitaxial regrowth is discussed. Electrical characteristics measurements of Fe and Co implanted InP indicate resistivities in excess of 10/sup 7/ Omega -cm critical voltages of 2.5 V, and current densities as low as 20 mA/cm/sup 2/ at critical voltage.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
![[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials](/Content/css/sci/img/zetp.jpg)
求助内容：
应助结果提醒方式：
扫码关注我们
