F. Cappelluti, A. Cédola, Arastoo Khalili, F. Elsehrawy, G. Bauhuis, P. Mulder, J. Schermer, G. Bissels, T. Aho, T. Niemi, M. Guina, Dongyoung Kim, Jiang Wu, Huiyun Liu
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Enabling High-Efficiency InAs/GaAs Quantum Dot Solar Cells by Epitaxial Lift-Off and Light Management
We report thin-film InAs/GaAs QD solar cells fabricated by epitaxial lift-off of 3-inch wafers containing QD epi-structures with high in-plane QD density. External quantum efficiency measurements demonstrate enhanced QD harvesting in the thin-film configuration. Numerical simulations show that remarkably high increase of the QD photocurrent may be achieved by replacing the planar rear mirror with micro-structured photonic gratings. Measurements of diffraction efficiency of grating prototypes realized on GaAs wafers by nanoimprint lithography are presented.
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