氟掺杂氧化锡(FTO)薄膜作为光伏应用的透明导电氧化物(TCO)

Journal of Physics C: Solid State Physics Pub Date : 2013-02-06 DOI:10.1063/1.4791235

A. Muthukumar, G. Rey, G. Giusti, V. Consonni, E. Appert, H. Roussel, Arivuoli Dakshnamoorthy, D. Bellet

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引用次数: 18

摘要

采用超声喷雾热解法在420℃下在康宁玻璃衬底上制备了FTO织构薄膜。研究了所制备的FTO功能薄膜的电学、光学和结构性能。FESEM观察到均匀织构的柱状晶粒形貌。制备的薄膜呈现沿(200)取向的多晶锡石结构。FTO具有良好的电学性能(4.3×10−4ω.cm)和高透射率(86%)，是一种很有前途的薄膜太阳能电池前电极。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fluorine doped tin oxide (FTO) thin film as transparent conductive oxide (TCO) for photovoltaic applications

Textured FTO thin films were deposited on corning glass substrates at 420°C by ultrasonic spray pyrolysis method. The electrical, optical and structural properties of the prepared functional FTO thin films were investigated. Homogeneous textured columnar grain morphology was observed through FESEM. As prepared thin films exhibits polycrystalline cassiterite structure with preferred orientation along (200). FTO is a promising TCO as front electrodes of thin film solar cells because of their good electrical properties (4.3×10−4ω.cm) combined with high transmission properties (86%).

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Journal of Physics C: Solid State Physics

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