{"title":"调q YAG:Nd/YAG:Cr微芯片激光器的产热过程及其对激光辐射参数的影响","authors":"O. Buryy, S. Ubizskii","doi":"10.1109/OMEE.2012.6464799","DOIUrl":null,"url":null,"abstract":"The heat generation processes are considered for passively Q-switched YAG:Nd/YAG:Cr microchip laser. The distributions of the temperature, the refractive index and the deformations of laser crystal are determined. At the given profile of refractive index and deformations of the active element, the laser beam radius and the divergence are calculated.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"34 5 1","pages":"177-178"},"PeriodicalIF":0.0000,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The heat generation processes in Q-switched YAG:Nd/YAG:Cr microchip laser and their influence on the parameters of laser radiation\",\"authors\":\"O. Buryy, S. Ubizskii\",\"doi\":\"10.1109/OMEE.2012.6464799\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The heat generation processes are considered for passively Q-switched YAG:Nd/YAG:Cr microchip laser. The distributions of the temperature, the refractive index and the deformations of laser crystal are determined. At the given profile of refractive index and deformations of the active element, the laser beam radius and the divergence are calculated.\",\"PeriodicalId\":6332,\"journal\":{\"name\":\"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)\",\"volume\":\"34 5 1\",\"pages\":\"177-178\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMEE.2012.6464799\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEE.2012.6464799","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The heat generation processes in Q-switched YAG:Nd/YAG:Cr microchip laser and their influence on the parameters of laser radiation
The heat generation processes are considered for passively Q-switched YAG:Nd/YAG:Cr microchip laser. The distributions of the temperature, the refractive index and the deformations of laser crystal are determined. At the given profile of refractive index and deformations of the active element, the laser beam radius and the divergence are calculated.
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