一种合成和生长ZnGeP2晶体的单步新工艺

T.Y. Wang , R. Sivakumar , D.K. Rai , W.T. Hsu , C.W. Lan
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引用次数: 18

摘要

本文首次报道了采用水平梯度冻结三区电阻炉一步法合成和生长锌锗磷化物ZnGeP2 (ZGP)的新工艺。通过Zn、Ge和P粉末的熔体生长,获得了一种安全、适宜的ZGP晶体合成和生长温度方案。用粉末x射线衍射对所制备的材料进行了表征,得到了正确的ZGP四方相。用EPMA结果估计了生长晶体的成分均匀性。
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A new single step process for synthesis and growth of ZnGeP2 crystal

A new one-step process for synthesis and growth of zinc–germanium–phosphide, ZnGeP2 (ZGP), is reported for the first time herein using a three-zone resistance furnace by the horizontal gradient freeze technique. A safe and proper temperature scheme has been obtained for both synthesis and growth of ZGP crystals via the melt growth route from Zn, Ge and P powder. The prepared material has been investigated using powder X-ray diffraction which shows the correct ZGP tetragonal phase. EPMA results are also obtained to estimate the compositional homogeneity of the grown crystal.

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