电子和工程用掺杂镉和极化碲化汞薄膜的半导体性和热电性的进一步研究

Applications of Surface Science Pub Date : 1985-05-01 DOI:10.1016/0378-5963(85)90209-0

A. Tawfik, M.M.Abou Sekkina, M.I.Abd El-Ati

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引用次数: 1

摘要

研究了新制备的Hg0.7Cd0.30Te薄膜的晶体结构、电导率和热释电性能。人们发现，这些性质彼此保持良好。明确指出了汞迁移、非化学计量学和结晶度的作用。最后，对碲化汞薄膜在电子工业和工程中的应用进行了评价和推荐。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Further studies on the semiconductivity and pyroelectricity of poled and Cd-doped mercury telluride thin films for electronics and engineering

The crystalline structure, electrical conductivity, and pyroelectricity of freshly prepared Hg_0.7Cd_0.30Te thin films have been investigated in detail. It was found that these properties hold good with one another. The roles of Hg migration, non-stoichiometry and degree of crystallinity are clearly indicated. Finally, the optimum conditions were evaluated and recommended for mercury telluride thin films for application in electronic industries and engineering.

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