电荷密度波化合物1T-TaS2和1T-TaSe2的结构调制缺陷

G. Salvetti, C. Roucau, R. Ayroles, H. Mutka, P. Molinié
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引用次数: 5

摘要

用电子显微镜研究了1t - tas2和1T-TaSe 2中与电荷密度波(CDW)相关的结构调制缺陷的形成。电子的照射会产生晶格缺陷,从而固定CDW的相位。这种钉住在CDW中引起应变,形成CDW缺陷。在1T-TaSe 2中,相应CDW的响应相对于不匹配的1T-TaSe 2 CDW更为刚性,其中CDW位错更容易形成。研究表明,在显微镜和电子显微镜下,在1T-TaSe 2和1T-TaSe 2中,CDW位错形成了默认的调制结构,结合了ODC。L'辐照aux电子credes默认的穿孔针相当的电流相的L 'ODC。这一扩展将包含odc默认值和odc设备默认值。图1T-TaSe 2列出了ODC不可通约率,加上一些可通约率,图1T-TaSe 2列出了ODC不可通约率,加上一些可通约率
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Defected structural modulation in the charge density wave compounds 1T-TaS2 and 1T-TaSe2
The formation of defects in the structural modulation associated with charge density waves (CDW) has been studied by electron microscopy in 1T-TaS 2 and 1T-TaSe 2 . The irradiation with electrons creates lattice defects that pin the phase of the CDW. This pinning induces strain in the CDW and forms the CDW defects. The response of the commensurate CDW in 1T-TaSe 2 is more rigid with respect to the incommensurate 1T-TaS 2 CDW in which the CDW dislocations are much easierly formed Nous avons etudie, par microscopie electronique, la formation de defauts de la modulation structurale associee aux ondes de densite de charge (ODC) dans 1T-TaS 2 et 1T-TaSe 2 . L'irradiation aux electrons cree des defauts ponctuels qui piegent la phase de l'ODC. Ce piegeage augmente la contrainte dans l'ODC et des defauts de l'ODC apparaissent. Dans 1T-TaS 2 les ODC incommensurables sont plus souples que celles commensurables dans 1T-TaSe 2 et des dislocations de l'ODC se creent plus facilement
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