用密度泛函理论研究新型氧硫族化合物的电子和光学性质

S. Moufok, B. Amrani
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摘要

由于技术的迅速发展,寻找一种具有无与伦比性能的新材料引起了科学界的兴趣,对未来的实验具有很大的启发作用。本文利用密度泛函理论(DFT)研究了新型稀土铸币金属chalconides YCuChO (Ch=S, Se, Te)的电子结构和光学性质。GGA-PBEsol和TB-mBJ两种功能都被用来描述交换相关相互作用。这些化合物是新的,以前没有合成过。预测了优化后的结构参数,即晶格参数和原子位置坐标。电子性质分析表明,所研究的化合物是宽直接带隙半导体。用mBJ方法计算得到的带隙从1.69 eV (Te化合物)到2.5 eV (S化合物)不等。此外,还从介电函数和损耗函数的角度对这些化合物的光学性质进行了全面的研究和讨论。研究结果为探索YCuChO (Ch=S, Se, Te)材料在光电领域的潜在应用提供了理论支持。
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Investigation of Electronic and Optical Properties of Novel Oxychalcogenides by Density Functional Theory
Abstract The search for a new material with unparalleled properties has attracted the interest of the scientific community due to rapid development of technology and it can be very inspiring to the future experiments. In this paper, electronic structure and optical properties of the new rare earth coinage-metal chalconegides YCuChO (Ch=S, Se, Te) are investigated in detail using state-of-the art density functional theory (DFT). Both the GGA-PBEsol and TB-mBJ functionals were used to describe the exchange-correlation interactions. These compounds are novel and have not been synthesized before. The optimized structural parameters, viz., lattice parameters and atomic position coordinates, are predicted. The analyses of the electronic properties indicate that the studied compounds are wide direct bandgap semiconductors. The calculated bandgaps varying from 1.69 eV (for the Te compound) to 2.5 eV (for the S compound) with the mBJ approach. Moreover, the optical properties of these compounds were comprehensively studied and discussed in terms of the dielectric function and loss function. The results provide theoretical support for the exploration of YCuChO (Ch=S, Se, Te) materials in potential optoelectronic applications.
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