基于衬底偏置的超低电源电压带隙基准

2010 International Conference on Electrical and Control Engineering Pub Date : 2010-06-25 DOI:10.1109/ICECE.2010.792

Yang-yang Peng, Wu Xiaobo, Ye Zhihao, Sun Yueming

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引用次数: 0

摘要

提出了一种工作在0.9V电源电压下的CMOS带隙基准电路(BGR)。为了保证其在超低电源电压下正常工作，采用衬底偏置技术降低阈值电压。同时，设计了亚阈值电流偏置放大器。该电路采用台积电0.35μm CMOS工艺设计。平均参考电压为658mV，温度系数为18.5 ppm/_。

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A Ultra Low Supply Voltage Bandgap Reference Based on Substrate Bias

A CMOS bandgap reference (BGR) capable of operating at supply voltage of 0.9V was proposed in this paper. To guarantee its normal operation at ultra low supply voltage, the substrate bias techniques is used to reduce the threshold voltage. Meanwhile, an amplifier biased by subthreshold current is designed. This circuit is designed in tsmc 0.35μm CMOS technology. An average reference voltage of 658mV with a temperature coefficient of 18.5 ppm/_ is achieved.

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2010 International Conference on Electrical and Control Engineering

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