采用化学浴沉积法制备导电SnO2薄膜

Vladislav I. Rogozin, V. F. Markov, L. Maskaeva, Anastasia E. Krasovskaya, Nikita S. Shalagin
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摘要

由于二氧化锡具有透明性和导电性等独特特性,因此经常用作透明接触层,用于生产显示器、太阳能电池和传感器设备。水化学法沉积SnO2薄膜因其简单、经济高效而成为一种发展方向。进行了离子平衡分析,计算了«Sn2+ - H2O - OH´体系中Sn(OH)2固相形成的边界条件。结果表明,在2 < pH < 12的范围内可制得氢氧化锡。初步结果可确定最佳混合酸度区间1 < pH < 5。结果表明,Sn(OH)2薄膜的厚度与溶液pH有很大关系,在pH = 8时达到最大值488 nm。在氯化锑和氟化铵同时存在的情况下,在玻璃和小衬底上获得了导电的SnO2层,然后在空气中退火。安装了厚度与温度和厚度与锡初始盐浓度的关系。在pH = 2的条件下,可以合成厚度为~74 nm的均匀氢氧化锡层。电镜法测定了合成膜的平均粒径为200 ~ 400 nm,退火膜的平均粒径为~20 nm,表明了膜的纳米结构性质。研究了加热前后沉积膜的形貌、元素组成和导电性能。研究了退火温度对薄膜电阻的影响,确定了三个温度范围内薄膜的导电性能差异很大,这与薄膜的相和结构转变有关。结果表明,在620 ~ 870 K的温度范围内,可以得到导电性能最好的SnO2薄膜,其电阻为3 ~ 5 kOm/sm。
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Obtaining the conductive SnO2 films by chemical bath deposition method
Thanks to such unique properties as transparency and conductivity tin dioxide often utilize as transparent contact layer to produce displays, solar cells, and sensor devices. Hydrochemical method of deposition SnO2 films is a perspective due to its simplicity, and economical efficiency. The ionic equilibria analysis was carried out and the boundary conditions of Sn(OH)2 solid phase formation in the «Sn2+ – H2O – OH‾» system calculated. It was established, that tin(II) hydroxide may be obtain in the range 2 < pH < 12. Preliminary results allow to determinate an optimal mixture sourness interval 1 < pH < 5. Revealed, that the thickness of the Sn(OH)2 films strongly depends on the solution pH. Maximum value of 488 nm reached at pH = 8. Conductive SnO2 layers were obtained on a glass and sitall substrates with simultaneously presence of antimony chloride and ammonium fluoride followed by annealing in air. The thickness vs temperature and thickness vs tin initial salt concentration dependences were installed. The uniform tin hydroxide layers with a thickness of ~74 nm may be synthesized under pH = 2 conditions. By the electron microscopy method the average particle size was established changing from 200 to 400 nm for as-synthesized films, to ~20 nm for annealed which indicates the nanostructure nature of the films. The morphology, elemental composition and conductive properties of deposited films were investigated before and after heating stage. Studying the annealing temperature influence at the film resistance were identified a three temperature ranges within which the films sharply differ in their conductive properties, which is associated with phase and structural transformations in them. Shown, that the most conductive SnO2 films with the omic resistance 3-5 kOm/sm were obtained at the temperature range 620-870 K.
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