Y. Suchikova, I. Bogdanov, S. Onishchenko, S. Vambol, V. Vambol, O. Kondratenko
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Morphologies and photoluminescence properties of porous n-InP
The samples of porous InP were grown up by a method of anode electrochemical etching on a substrate (100) InP n-type. The samples were characterized by scanning electronic microscopy (SEM) and photoluminescence (PL) where a blue shift was observed in PL. To remove surface oxides from the surface of porous InP using the thermal cleaning of the samples in a stream of high purity hydrogen. Chemical composition of surface of porous n-InP after in hydrogen probed treatment the method of Energy dispersive X-ray spectroscopy. Size of walls between pores which makes 3–11nm.
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