1064nm连续波双频垂直外腔半导体激光器驱动的280ghz辐射源

2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) Pub Date : 2021-08-29 DOI:10.1109/IRMMW-THz50926.2021.9566938

A. Abbes, P. Lu, P. Nouvel, A. Pénarier, L. Varani, G. Beaudoin, I. Sagnes, A. Garnache, M. Jarrahi, S. Blin

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引用次数: 1

摘要

我们报道了第一个280 GHz的太赫兹发射，由1064 nm发射的连续波双频垂直外腔半导体激光器激发，并使用长载流子寿命的等离子体光电混合器。这些令人鼓舞的结果为在室温下工作的相干、可调谐、紧凑、强大和低成本的太赫兹源铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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280 GHz Radiation Source Driven by a 1064nm Continuous-Wave Dual-Frequency Vertical External Cavity Semiconductor Laser

We report the first THz emission at 280 GHz excited by a Continuous-Wave Dual-Frequency Vertical-External-Cavity Semiconductor Laser emitting at 1064 nm and using a long carrier-lifetime plasmonic-based photomixer. These encouraging results pave the way toward coherent, tunable, compact, powerful, and low-cost terahertz sources working at room temperature.

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2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)

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