半导体微腔中自发发射动力学控制

B. Gayral
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引用次数: 15

摘要

光的自发发射是可以控制的,空腔量子电动力学告诉我们,原子物理学中的许多实验证明了这一事实。特别地,耦合一个发射极到谐振光子模式的一个腔可以提高其自发发射率:这就是所谓的珀塞尔效应。虽然为了发光半导体器件的利益,实现这些概念似乎很吸引人,但必须非常小心地考虑应该使用哪个发射极/腔系统。半导体量子盒被证明是见证珀塞尔效应的良好候选者。此外,需要具有高光学质量的小体积腔,换句话说,需要长时间的光子存储时间。介绍和讨论了这种空腔的最新制造技术。
我们在时间分辨和连续波光致发光实验中证明了InAs/GaAs量子盒的自发发射速率增强。这适用于两种空腔,即GaAs/AlAs微柱(全局增强系数为5)和GaAs微盘(全局增强系数为20)。讨论了基于珀塞尔效应的激光器、发光二极管和单光子源的发展前景。
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Controlling spontaneous emission dynamics in semiconductor microcavities
Spontaneous emission of light can be controlled, cavity quantum electrodynamics tells us, and many experiments in atomic physics demonstrated this fact. In particular, coupling an emitter to a resonant photon mode of a cavity can enhance its spontaneous emission rate: this is the so-called Purcell effect. Though appealing it might seem to implement these concepts for the benefit of light-emitting semiconductor devices, great care has to be taken as to which emitter/cavity system should be used. Semiconductor quantum boxes prove to be good candidates for witnessing the Purcell effect. Also, low volume cavities having a high optical quality – in other words a long photon storage time – are required. State-of-the-art fabrication techniques of such cavities are presented and discussed.
We demonstrate spontaneous emission rate enhancement for InAs/GaAs quantum boxes in time-resolved and continuous-wave photoluminescence experiments. This is done for two kinds of cavities, namely GaAs/AlAs micropillars (global enhancement by a factor of 5), and GaAs microdisks (global enhancement by a factor of 20). Prospects for lasers, light-emitting diodes and single photon sources based on the Purcell effect are discussed.
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Annales De Physique
Annales De Physique 物理-物理:综合
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