W. Hwang, M. Remškar, R. Yan, V. Protasenko, K. Tahy, S. Chae, H. Xing, A. Seabaugh, D. Jena
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First demonstration of two-dimensional WS2 transistors exhibiting 105 room temperature modulation and ambipolar behavior
Two-dimensional (2D) WS2 transistors were fabricated and characterized for the first time from chemically-synthesized material. Raman measurements confirm the 2D crystal nature of the material, and the presence of a bandgap leads to high on/off current ratios and current saturation in the transistors at room temperature. In addition, the observed photoresponse of the 2D layered semiconductor can enable optical device applications.
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