评估trans - blaha修饰的Becke-Johnson交换势在紫外-可见光区半导体光学常数的性能

K. Nakano, T. Sakai
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引用次数: 19

摘要

本文报道了基于trans - blaha修正Becke-Johnson交换势和随机相位近似介电函数的密度泛函理论(DFT)在紫外-可见(UV-Vis)光区半导体光学常数的性能。我们计算了固体光学常数手册中列出的70种半导体的光学带隙Eg,折射率n和消光系数k[(学术出版社,1985),卷1;(学术出版社,1991),第2卷;(学术出版社,1998),第3卷),并将结果与实验值进行比较。结果表明,计算得到的带隙和光学常数与实验值吻合较好,Eg值为0.440 eV, n值为0.246 ~ 0.299,k值为0.207 ~ 0.598。rmse的小值表明,即使通过这种低成本的DFT计算,也可以定量预测半导体在UV-Vis区的光学常数。
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Assessing the performance of the Tran-Blaha modified Becke-Johnson exchange potential for optical constants of semiconductors in the ultraviolet-visible light region
We report on the performance of density functional theory (DFT) with the Tran–Blaha modified Becke–Johnson exchange potential and the random phase approximation dielectric function for optical constants of semiconductors in the ultraviolet–visible (UV-Vis) light region. We calculate optical bandgaps Eg, refractive indices n, and extinction coefficients k of 70 semiconductors listed in the Handbook of Optical Constants of Solids [(Academic Press, 1985), Vol. 1; (Academic Press, 1991), Vol. 2; and (Academic Press, 1998), Vol. 3] and compare the results with experimental values. The results show that the calculated bandgaps and optical constants agree well with the experimental values to within 0.440 eV for Eg, 0.246–0.299 for n, and 0.207–0.598 for k in root mean squared error (RMSE). The small values of the RMSEs indicate that the optical constants of semiconductors in the UV-Vis region can be quantitatively predicted even by a low-cost DFT calculation of this type.
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