一种无死区时间的全局快门CMOS图像传感器，具有像素内LOFIC和使用像素无线连接的ADC

2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits) Pub Date : 2016-06-15 DOI:10.1109/VLSIC.2016.7573544

Hidetake Sugo, Shunichi Wakashima, R. Kuroda, Y. Yamashita, H. Sumi, Tzu-Jui Wang, Po-Sheng Chou, Ming-Chieh Hsu, S. Sugawa

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引用次数: 16

摘要

采用像素级连接，开发了几乎100%时间孔径(无死区)全局快门(GS)堆叠CMOS图像传感器(CIS)，具有像素级横向溢出集成电容器(LOFIC)、ADC和DRAM。采用45nm 1P4M CIS技术和65nm 1P5M CMOS技术分别制备了具有6.6μm-pitch VGA LOFIC像素无死区GS模式和1.65μm-pitch 4.9M亚像素高分辨率滚动快门(RS)模式的原型芯片。

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A dead-time free global shutter CMOS image sensor with in-pixel LOFIC and ADC using pixel-wis e connections

An almost 100% temporal aperture (dead-time free) global shutter (GS) stacked CMOS image sensor (CIS) with in-pixel lateral overflow integration capacitor (LOFIC), ADC and DRAM is developed using pixel-wise connections. The prototype chip with 6.6μm-pitch VGA LOFIC pixel dead-time free GS mode and 1.65μm-pitch 4.9M sub-pixel high resolution rolling shutter (RS) mode was fabricated with a 45nm 1P4M CIS technology for PD substrate and a 65nm 1P5M CMOS technology for ASIC substrate.

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2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)

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