TlGaTe2半导体填料聚乙烯复合材料的充电状态

M. A. Nuriev, A. Abdullaev, I. M. Nuruev, A. Shukurova, V. G. Mamedov
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摘要

本文研究了体积含量为3,7,10 vol.%的铁电半导体填料TlGaTe2和铁电半导体TlGaTe2的高密度聚乙烯(HDPE)聚合物复合材料的电荷状态,并研究了它们的介电常数ε(T)和电导率ρ(T)的温度依赖性。研究表明,在HDPE聚合物基体中引入半导体填料TlGaTe2,可以控制HDPE/TlGaTe2聚合物复合材料的电荷状态,从而有助于有目的地改变这些材料的电物理性能。
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Charging state of polyethylene composites with TlGaTe2 semiconductor filler
The aim of this work is to study the charge state of polymer composites based on high-density polyethylene (HDPE) with a ferroelectric semiconductor filler TlGaTe2 at a volume content of 3, 7, 10 vol.%, And the ferroelectric semiconductor TlGaTe2 itself, as well as to study the temperature dependence of their dielectric constant ε(T) and electrical conductivity ρ(T). It is shown that the introduction of the semiconductor filler TlGaTe2 into the polymer matrix of HDPE makes it possible to control the charge state of polymer composites HDPE/TlGaTe2, which can contribute to a purposeful change in the electrophysical properties of these materials.
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